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產(chǎn)品詳情 介紹
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 110 A
Rds On - Drain-Source Resistance: 8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 97.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRF3205PBF SP001559536
Unit Weight: 0.068784 oz
英飛凌 介紹
總部位于德國(guó)Neubiberg的英飛凌科技股份公司，為現(xiàn)代社會(huì)的三大科技挑戰(zhàn)領(lǐng)域——高能效、移動(dòng)性和安全性提供半導(dǎo)體和系統(tǒng)解決方案。
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